1

Manufacture of Non-metallic Mineral Products

263003J

Polysilicon Preparation Technology

1. Fluidized-bed cold hydrogenation process for trichlorosilane with a single-line capacity of ≥250,000 tonnes/year, and its equipment manufacturing technology.
2. Silane fluidized-bed process with a single-line capacity of ≥20,000 tonnes/year, and its equipment manufacturing technology.

2

263004J

Silicon Wafer Preparation Technology

Technology for preparing silicon wafers with a thickness of ≤70 μm, and its equipment manufacturing technology.
Note: “Silicon wafer preparation technology” includes program code, underlying algorithm models, equipment drawings, and the like.

3

Manufacture of Electrical Machinery and Equipment

263801J

Photovoltaic Cell Preparation Technology

1. Photovoltaic-specific edge passivation technology for preparing crystalline silicon cells that meets all of the following conditions, and its equipment manufacturing technology:
（1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
（2）Silicon wafer thickness ≤140 μm.
2. Production technology for perovskite and tandem cell modules, and its equipment manufacturing technology, including:
（1）Perovskite/crystalline silicon tandem cell technology, with a mass-production wafer size of ≥182 mm and an efficiency of ≥30%;
（2）Perovskite-specific slot-die coating technology, with a coating width of ≥1.1 m;
（3）Large-area single-junction perovskite cell module technology, with a module area of ≥1 m² and an efficiency of ≥18%;
（4）Large-area perovskite tandem cell module technology, with a module area of ≥1 m² and an efficiency of ≥28%.

4

Manufacture of Non-metallic Mineral Products

263004X

Polysilicon Preparation Technology

1. Polysilicon engineering technology for a single-line capacity of ≥30,000 tonnes/year.
2. Reduction process with a polysilicon capacity of ≥800 tonnes/year per reduction furnace, and its equipment manufacturing technology.
Note: “Engineering technology” includes equipment engineering design, plant construction engineering design, process packages, and the like.

5

Manufacture of Non-metallic Mineral Products

263005X

Silicon Wafer Preparation Technology

1. Technology for pulling monocrystalline silicon ingots for photovoltaic applications, and its equipment manufacturing technology, including:
（1）Monocrystalline furnace design and application solutions with a furnace chamber inner diameter of ≥1,600 mm;
（2）Monocrystalline furnace thermal-field design and application solutions for ingot sizes of ≥35 inches;
（3）Monocrystalline furnace design and application solutions with a pulling rate of ≥1.2 mm/minute;
（4）Monocrystalline furnace design and application solutions with an energy consumption per unit diameter power of ≤40 kW.
2. Machining technology for monocrystalline silicon ingots for photovoltaic applications, and its equipment manufacturing technology, including:
（1）Machining technology for cutting and grinding half-ingots;
（2）Machining technology suitable for manufacturing silicon ingots with a length of ≥720 mm.
3. Technology for preparing ultra-thin, large-format photovoltaic silicon wafers, and its equipment manufacturing technology, including:
（1）Preparation technology suitable for manufacturing rectangular silicon wafers with any side measuring ≥182 mm;
（2）Technology suitable for preparing silicon wafers with a thickness of 130 μm or less:
1）Tungsten wire slicing technology for wafers 28 μm thick or less;
2）Slicing equipment design and application solutions with a spindle speed of ≥6,500 rpm, or a main roller diameter of ≤120 mm, or a main roller lateral shaft spacing of ≤370 mm.

6

Manufacture of Electrical Machinery and Equipment

263802X

Photovoltaic Cell Preparation Technology

1. Preparation technology for high-efficiency tunnel oxide passivated contact (TOPCon) and high-efficiency back-contact (XBC) crystalline silicon cells, and its equipment manufacturing technology, including:
（1）Photovoltaic-specific coating technology using low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) for ultrathin tunnel oxide layers and doped polysilicon selective passivated contact layers, meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, LPCVD equipment capacity ≥6,000 wafers/hour and PECVD equipment capacity ≥6,000 wafers/hour.
（2）Photovoltaic-specific coating technology using atomic layer deposition (ALD) for aluminum oxide surface passivation layers, meeting all of the following conditions:
1）Each side measures 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, capacity ≥12,000 wafers/hour.
（3）Photovoltaic-specific high-temperature boron diffusion technology meeting all of the following conditions:
1）Each side measures 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, capacity ≥4,500 wafers/hour.
（4）TOPCon cell copper-plated electrode preparation technology meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
（5）Photovoltaic-specific coating technology for low-temperature amorphous or microcrystalline silicon deposition using PECVD, meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
（6）XBC cell electroplating and electroless coating technology meeting all of the following conditions:
1）For full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
2. Heterojunction (HJT) crystalline silicon cell preparation technology, and its equipment manufacturing technology, including:
（1）Transparent conductive film deposition technology for heterojunction cell stacks, with any of the following characteristics, suitable for processing silicon wafers with a thickness of ≤110 μm:
1）Indium content in the transparent conductive film ≤50%;
2）Based on G12 wafers, capacity ≥14,000 half-wafers/hour.
（2）Crystalline silicon thin-film deposition technology for heterojunction cells, with any of the following characteristics, suitable for processing silicon wafers with a thickness of ≤110 μm:
1）For high-efficiency N-type heterojunction cells, film crystallinity ≥40%, or, based on G12 wafers, capacity ≥14,000 half-wafers/hour;
2）For P-type heterojunction cells, maximum conversion efficiency ≥23% under AM1.5 test conditions, or maximum conversion efficiency ≥20.5% under AM0 test conditions.
（3）Preparation technology for low-silver-content silver-coated copper heterojunction solar cells, with a silver content of ≤30%.
（4）Preparation technology for heterojunction cells with copper-plated electrodes.
Note: In this category of technologies, “high-efficiency” means an average cell conversion efficiency of ≥25% under AM1.5 test conditions, or an average mass-production module conversion efficiency of ≥22.3%.

6

Manufacture of Electrical Machinery and Equipment

263802X

Photovoltaic Cell Preparation Technology

1. Preparation technology for high-efficiency tunnel oxide passivated contact (TOPCon) and high-efficiency back-contact (XBC) crystalline silicon cells, and its equipment manufacturing technology, including:
（1）Photovoltaic-specific coating technology using low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) for ultrathin tunnel oxide layers and doped polysilicon selective passivated contact layers, meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, LPCVD equipment capacity ≥6,000 wafers/hour and PECVD equipment capacity ≥6,000 wafers/hour.
（2）Photovoltaic-specific coating technology using atomic layer deposition (ALD) for aluminum oxide surface passivation layers, meeting all of the following conditions:
1）Each side measures 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, capacity ≥12,000 wafers/hour.
（3）Photovoltaic-specific high-temperature boron diffusion technology meeting all of the following conditions:
1）Each side measures 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm;
3）Based on full G12 wafers, capacity ≥4,500 wafers/hour.
（4）TOPCon cell copper-plated electrode preparation technology meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
（5）Photovoltaic-specific coating technology for low-temperature amorphous or microcrystalline silicon deposition using PECVD, meeting all of the following conditions:
1）Suitable for full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
（6）XBC cell electroplating and electroless coating technology meeting all of the following conditions:
1）For full, half, or multi-cut solar silicon wafers, with each side measuring 182–230 mm based on the dimensions of a full wafer;
2）Silicon wafer thickness ≤140 μm.
2. Heterojunction (HJT) crystalline silicon cell preparation technology, and its equipment manufacturing technology, including:
（1）Transparent conductive film deposition technology for heterojunction cell stacks, with any of the following characteristics, suitable for processing silicon wafers with a thickness of ≤110 μm:
1）Indium content in the transparent conductive film ≤50%;
2）Based on G12 wafers, capacity ≥14,000 half-wafers/hour.
（2）Crystalline silicon thin-film deposition technology for heterojunction cells, with any of the following characteristics, suitable for processing silicon wafers with a thickness of ≤110 μm:
1）For high-efficiency N-type heterojunction cells, film crystallinity ≥40%, or, based on G12 wafers, capacity ≥14,000 half-wafers/hour;
2）For P-type heterojunction cells, maximum conversion efficiency ≥23% under AM1.5 test conditions, or maximum conversion efficiency ≥20.5% under AM0 test conditions.
（3）Preparation technology for low-silver-content silver-coated copper heterojunction solar cells, with a silver content of ≤30%.
（4）Preparation technology for heterojunction cells with copper-plated electrodes.
Note: In this category of technologies, “high-efficiency” means an average cell conversion efficiency of ≥25% under AM1.5 test conditions, or an average mass-production module conversion efficiency of ≥22.3%.